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| EIB1213-4P UPDATED 06/14/06 12.75-13.25GHz 4W Internally Matched Power FET FEATURES * * * * * * * 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-4P ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ 1600mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ 1600mA Gain Flatness f = 12.75-13.25GHz VDS = 8 V, IDSQ 1600mA Power Added Efficiency at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ 1600mA Drain Current at 1dB Compression f = 12.75-13.25GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2 VDS = 8 V, IDSQ 65% IDSS f = 13.25GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.0 7.50 TYP 36.0 8.50 MAX UNITS dBm dB 0.6 25 1700 -43 -46 2720 -2.0 4.5 3400 -3.5 5.0 o dB % 1900 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 24 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10V -5 43.2mA -7.2mA 35.0dBm 175 oC -65 to +175 oC 30W CONTINUOUS2 8V -4V 14.4mA -2.4mA @ 3dB Compression 175 oC -65 to +175 oC 30W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006 |
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